2SK2980 Silicon N Channel MOS FET High Speed Power.
Renesas
2SK2980 - Silicon N-Channel MOSFET
2SK2980 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate .
Hitachi Semiconductor
2SK2980 - Silicon N-Channel MOSFET
2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω ty.
