2SK3162 Silicon N Channel MOS FET High Speed Power.
Hitachi Semiconductor
2SK3162 - N-Channel MOSFET
2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS = 60 mΩ ty.
Renesas
2SK3162 - N-Channel MOSFET
2SK3162 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive dev.