Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-735B (Z) 3rd. Edition February 1999 Features
- Low on-resistance R DS = 60 mΩ typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
TO- 220FM
1 2 S
1. Gate 2. Drain 3....
