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2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-734A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK3161(L),2SK3161(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 200 ±20 15 60 15 15 15 75 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1.
2SK3161S Datasheet
