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2SK3163 - N-Channel MOSFET

Datasheet Summary

Features

  • Low on-resistance R DS(on) = 6 mΩ typ.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source Outline TO.
  • 3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3163 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

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Datasheet Details

Part number 2SK3163
Manufacturer Hitachi Semiconductor
File Size 48.57 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3163 Datasheet
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Full PDF Text Transcription

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2SK3163 Silicon N Channel MOS FET High Speed Power Switching ADE-208-736A (Z) 2nd Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3163 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note 1 Ratings 60 ±20 75 300 75 50 214 110 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
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