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2SK3160 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • Low on-resistance R DS = 130 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline TO.
  • 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID.

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Datasheet Details

Part number 2SK3160
Manufacturer Hitachi Semiconductor
File Size 51.67 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK3160 Datasheet
Additional preview pages of the 2SK3160 datasheet.

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2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 200 ±20 10 40 10 10 6.6 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
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