DataSheet.in TENTATIVE TOSHIBA Field Effect Trans.
2SK3563 - N-Channel MOSFET
DataSheet.in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 2SK3563 unit:mm Switching Regulator Application.K3563 - 2SK3563
www.DataSheet4U.com TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit:mm Switching Regulator App.2SK3563 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3563 FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Res.