2SK389 Datasheet | Specifications & PDF Download

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor

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isc N-Channel MOSFET Transistor 2SK3899-ZK FEATURES ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-

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www.datasheet4u.com SMD Type MOSFET MOS Field Effect Transistor 2SK3899 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low On

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isc N-Channel MOSFET Transistor 2SK3892 FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor 2SK3891-01R FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Static Drain-Source O

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2SK3891-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-r

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving ci

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