3.0HS Datasheet | Specifications & PDF Download

RX65T300HS2A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarr

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Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time –

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Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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The Future of Analog IC Technology DESCRIPTION The MP44010 is a boundary conduction mode PFC controller which can provide simple and high performance

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Six-Element SMD Photodiode Array OPR2100, OPR2100T, OPR2100HS, OPR2100HST Features:  Six-PIN photodiode array  High-temperature chip carrier  Close

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Six-Element SMD Photodiode Array OPR2100, OPR2100T, OPR2100HS, OPR2100HST Features:  Six-PIN photodiode array  High-temperature chip carrier  Close

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21090H Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement -

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Preliminary Product Specification ASD5020 High Speed Mode Multi-Mode 12-bit 640 MSPS / 8-bit 1000 MSPS Analog to Digital Converter Features ● 12-bit

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ADVANCED INFORMATION Product Summary BVDSS -600V RDS(ON) Max 9Ω @ VGS = -10V ID TA = +25°C -0.3A Description and Applications This MOSFET is desi

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Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mod

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www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Rugg

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2-Electrode Gas Discharge Tubes 1：Dimension(mm) 2.5KA Surface Mount Φ5*4.4mm 2:Main Applications •PCI Cards protection •Telephone/Fax/Modem protect

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Freescale Semiconductor Technical Data Document Number: MRF8S9220H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 www.DataSheet4U.com RF Power Field Effect Transistors N - Channe

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Freescale Semiconductor Technical Data Document Number: MRF8P20160H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistor N-Channel En

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DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N--Channel Enhanc

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SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • D

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10A Avg. 120 Volts SBD NB10HSA12

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