3.3.200 Datasheet | Specifications & PDF Download

DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X 4 ) Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • JEDEC-standard 1.8V

(341 views)

DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X 4 ) Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • JEDEC-standard 1.8V

(341 views)

AB-2003 DigiDice Socket 478 Mini PC System User’s Manual 4200-0382-24 Rev. 1.01 Copyright and Warranty Notice The information in this document is sub

(338 views)

MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

(331 views)

TPM2003 40-V 7-Ch Low-side Driver Array Features Description • 7-channel Darlington Array • 500-mA Rated Drain Current (Per Channel) • Very Low Out

(280 views)

TPL51200 Series 3-A Sink and Source DDR Termination Regulator Features ◼ VIN Voltage: Support 2.5-V, 3.3-V and 5-V Power Rails ◼ VLDOIN Voltage Range

(278 views)

A-Data www.DataSheet4U.com ADECB1608 Revision History Revision 1 ( Dec. 2001 ) 1.Fister release. Revision 2 ( Apr. 2002 ) 1. Changed module current

(277 views)

Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L

(193 views)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

(161 views)

HFX7000-200 Fiber Optic Component 50 Mbps, 650 nm LED DESCRIPTION The HFX7000-200 is a 50 Mbps LED designed to meet data transmission requirements in

(152 views)

SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

(151 views)

TIGER Machine Translated by Google ELECTRONIC CO.,LTD Bipolar Circuit CS2003CP Seven-channel Darlington tube driver circuit 1. Overview CS2003CP i

(142 views)

Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

(140 views)

® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

(139 views)

www.DataSheet4U.com RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3

(138 views)

CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

(130 views)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

(111 views)

Translated from chinese by: Esquiloesperto (Messias-BH.) ATX 2005 POWER SUPPLY PWM SUPERVISOR Power Supply Pulse Width Modulation Integrated Circuit C

(105 views)

R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

(95 views)

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

(77 views)