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AOE6936 - 30V Dual Asymmetric N-Channel MOSFET
AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab.7136-1 - 30mA Low Power LDO
30mA Low Power LDO Features · Low power consumption · Low voltage drop · Low temperature coefficient · High input voltage (up to +18V) · Output volt.AONY36356 - 30V Dual Asymmetric N-Channel MOSFET
AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig.AONY36352 - 30V Dual Asymmetric N-Channel MOSFET
AONY36352 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca.AON6366E - 30V N-Channel MOSFET
AON6366E 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Cur.AON6360 - 30V N-Channel MOSFET
AON6360 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (enhanced αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Curre.3DD13007N36 - NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 3DD13007N36 TRANSISTOR (NPN) TO-220-3L FEATURES z Powe.MR831 - (MR830 - MR836) 600V Vrrm Fast Recovery Rectifier
wwwww.D.DaattaaSSheet4U.ccoomm .SWB-QC30H - QUALCOMM WCN3660 WLAN & BT & FM Solution
SWB-QC30H QC30H Datasheet (Preliminary) SWB-QC30H Datasheet QUALCOMM WCN3660 WLAN & BT & FM Solution REV 7 Samsung Electro-Mechanics 2012-07-17 S.M236HGK-L30 - TFT LCD Module
PRODUCT SPECIFICATION Doc. Number : Tentative Specification Preliminary Specification Approval Specification MODEL NO.: M236HGK SUFFIX: L30 Custome.SSF3637S - 30V P-Channel MOSFET
SSF3637S 30V P-Channel MOSFET DESCRIPTION The SSF3637S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device .AONH36334 - 30V Dual Asymmetric N-Channel MOSFET
AONH36334 30V Dual Asymmetric N-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Ch.B43630 - Aluminum electrolytic capacitor
Aluminum electrolytic capacitors Snap-in capacitors Series/Type: Date: B43630 December 2019 © TDK Electronics AG 2019. Reproduction, publication an.MM3630BR - Output voltage compensation DC/DC converter
MITSUMI Output voltage compensation DC/DC converter for USB MM3630BR Output voltage compensation DC/DC converter for USB Monolithic IC MM3630BR Out.S7A401830M - 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM
SSSS7777AAAA444400001331866833330000MMMM 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM 4Mb Sync. Pipelined.2N3630 - NPN Transistor
5 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mh.PI3302-00-LGIZ - 8V to 36Vin Cool-Power ZVS Buck Regulator
PI33XX‐X0‐LGIZ Cool‐Power® 8V to 36Vin Cool‐Power® ZV.PI3302-20-LGIZ - 8V to 36Vin Cool-Power ZVS Buck Regulator
PI33XX‐X0‐LGIZ Cool‐Power® 8V to 36Vin Cool‐Power® ZV.STMP3630XXBBEB1M - Audio System on Chip
PRODUCT DATA SHEET STMP36xx Audio System on Chip with USB OTG, LCD, Hard Drive, and Battery Charger Fourth-Generation Audio Decoder Version 1.02 May 3.