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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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ST13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot s

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STD13007 NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed switching • High Collector Voltage : VCBO = 700V • Suit

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)

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ST13007 High voltage fast-switching NPN power transistor Features ■ DC current gain classification ■ High voltage capability ■ Low spread of dynamic

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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HY3008P/M/B/ MF /PL/PM N-Channel Enhancement Mode MOSFET Feature z 80V/100A RDS(ON)= 6.6mΩ(typ.)@VGS = 10V z 100% Avalanche Tested z Reliable and Ru

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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ST13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operat

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NV3007 Datasheet A-Si TFT LCD Single Chip Driver 168RGBx428 Resolution and 262K color Version 1.0 Jun, 2024 Jun.,2024 Confidential Information V

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TAS5614LA SLAS846A – MAY 2012 – REVISED MARCH 2015 TAS5614LA

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13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximu

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PCB relays Single relays Power relay K (open and sealed) Catalog 1308028 Issued 01-05 Powertrain Systems Chassis Systems Safety Security Body D

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MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed powe

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MIX3007 2X3W D MIX3007、2 X 3W D 。 MIX3007RNS()PSRR MIX3007。 PWM、PCB ,。90%, MIX3007 。  D : — 3 W/ch (VDD=5V RL=3Ω THD+N=10%) — 1.6 W/ch (VDD=5V R

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