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3DD13009 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect.ETA3000 - Inductive Cell Balancer
ENABLE 1nF 6 STAT BATP 2 BIAS 5 10nF 8 ENETA3000SW 3 22uF 2.2uH RISET 7 ISET BATC 1 BATN 4 10uF 10uF Li+ Batt.13003 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti.D13009K - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W.MJE13002 - High Voltage Fast-Switching NPN Power Transistor
TST002 SEMI CONDUCTOR MJE13002 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ W.MIX3001 - 2 x 3W FM Non-Interference Class-D Amplifier
MIX3001 2X3W FM Non-Interference Class-D Amplifier Description The MIX3001 is a high efficiency, 3W/channel stereo class-D audio power amplifier. A L.3.0SMCJ10 - 3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
® WON-TOP ELECTRONICS 3.0SMCJ SERIES 3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Pb Features Glass Passivated Die Construction 3000W Peak P.M3004D - N-Ch 30V Fast Switching MOSFET
QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density.D13007M - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z .J13007-2 - High Voltage Fast-Switching NPN Power Transistor
FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High.13009 - NPN power transistor
ST13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot s.IP3005 - Ultra-high precision built-in MOSFET single-cell lithium battery protection
Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote.D13003 - NPN Silicon Power Transistor
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100.D13009 - NPN Silicon Bipolar Transistor
( DataSheet : www.DataSheet4U.com ) NPN ■■ :、。 D13009 C B E ■■ (Ta=25℃) - - - ■■(Ta=25℃) - - - - - - - ■■ HFE(1) (Tc=25.D13007K - Low-frequency amplification shell rated bipolar transistors
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