300D Datasheet | Specifications & PDF Download

MITSUBISHI IGBT MODULES CM300DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A D F S(4 - Mounting Holes) H B E T CM U J H 3 - M6

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MITSUBISHI TRANSISTOR MODULES QM300DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24B • • • • • IC Collector current

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APTGF300DU120G Dual Common Source NPT IGBT Power Module C1 Q1 G1 C2 Q2 G2 www.DataSheet4U.com VCES = 1200V IC = 300A @ Tc = 80°C Application • AC Sw

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TEMPERATURE COMPENSATION D THERMISTOR The D thermistor, based on resistance changes, is used in transistor, coil and other te,mperature compensating c

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P300A, P300B, P300D, P300G, P300J, P300K, P300K www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifier DO-201AD FEATURES •

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MOTOROLA Freescale Semiconductor, Inc. Order Number: MMA2300D Rev. 3, 06/2004 SEMICONDUCTOR TECHNICAL DATA Surface Mount Micromachined Acceleromete

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www.DataSheet4U.com MITSUBISHI IGBT MODULES CM300DY-12NF HIGH POWER SWITCHING USE CM300DY-12NF ¡IC

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www.DataSheet4U.com Thick Film Thermal Printhead (300dpi) KD3003-DC92A KD3003-DC92A is developing type of GL40 series which are developed mainly for

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Type DCMC 85 °C High Capacitance, Screw Terminal, Aluminum Highest Capacitance Screw Terminal Type With more capacitance and often more ripple-current

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AUDIO VIDEO CONTROL CENTER KRF-V6300D INSTRUCTION MANUAL Declaration of Conformity with regard to the EMC Directive 2004/108/EC Manufacturer: Kenwood

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SEMICONDUCTOR 300D(R)Series RRooHHSS Nell High Power Products Standard Recovery Diodes Stud Version, 300A FEATURES Alloy diode Popular series for ro

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  2.0W Power Dissipation  2.7V – 330V Nominal Zener Voltage  5% Standard Vz Toler

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SMA1EZ110D5 THRU SMA1EZ330D5 Features • Glass Passivated Junction • Excellent Clamping Capability • Halogen Free. “Green” Device (Note 1) • Moisture

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MF3D(H)x3 MIFARE DESFire EV3 contactless multi-application IC Rev. 3.1 — 11 January 2024 Product short data sheet 1 General description 1.1 Introduc

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n-channel JFETs H designed for • • • • VHF/UHF Amplifiers • Oscillators • Mixers Performance Curves NZF See Section 4 BENEFITS • High Power Gain 20

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2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-

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MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B M P - DIA. (4 TYP.) C2E1 E2 C1 E2 C2 R L D C F C1 E1 R G S -

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CM300DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ H-Series Module 300 Amperes/1400 Volts

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1519 10-TAP DIP DELAY LINE TD/TR = 5 (SERIES 1519) FEATURES • • • • • • 10 taps of equal delay increment Delays as large as 300ns available Low DC re

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HM2300DR N-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate char

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