3212 Datasheet | Specifications & PDF Download

E3M0032120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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2CW032XXXJL-R 2CW032XXXJL-R SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE WITH ASYMMETRY LIMITS DESCRIPTION ¾ 2CW032XXXJL-R series are low-power zener

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ESMT LPDDR3 SDRAM Feature  Ultra-low-voltage core and I/O power supplies ­ VDD1 = 1.70–1.95V ­ VDD2, VDDCA, VDDQ = 1.14–1.30V  Organization ­ 16M wo

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IS43/46LD32128B 4Gb (x32) Mobile LPDDR2 S4 SDRAM FEATURES • DDP (Dual Die Package) with 2 x 2Gb LPDDR2 • Low-voltage Core and I/O Power Supplies VDD

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Global Mixed-mode Technology G3212 Low Capacitance VGA 2:2 Dual-Graphics Cross- over Switch Features „ Low ON-Resistance 5Ω (Typical), RGB Signal

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SH79F3212 8051 Microcontroller with 8 channels Touch-key input and 12 Bit PWM and 12 Bit ADC 1. Features  8bits micro-controller with Pipe-line st

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www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas

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ADP3212A, NCP3218A 7-Bit, Programmable, 3-Phase, Mobile CPU Synchronous Buck Controller The APD3212A/NCP3218A is a highly efficient, multi−phase, sy

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2CW032XXXYQ 2CW032XXXYQ SERIES ZENER DIODE CHIPS FOR GLASS SEAL DESCRIPTION ¾ 2CW032XXXYQ series are low-power zener diode chips for glass seal that f

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MCM LNA Product Features LCL3212-L / LCL3512-L LCL3712-L Applications • 2G & 3G Repeater • Base Station • PCS, CDMA, W-CDMA • GSM, DCS, UMTS • WiMAX,

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APL3212A/B/C Li+ Charger Protection IC Features • • • • • • • • • • Provide Input Over-Voltage Protection Programmable Input Over-Current Protection

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VDS 1200 V C3M0032120D ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode

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IS43/46LQ16256A, IS43/46LQ16256AL IS43/46LQ32128A, IS43/46LQ32128AL ® Long-term Support World Class Quality 4Gb (x16/x32) Mobile LPDDR4/LPDDR4X FEA

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ESMT LPDDR3 SDRAM Feature  Ultra-low-voltage core and I/O power supplies ­ VDD1 = 1.70–1.95V ­ VDD2, VDDCA, VDDQ = 1.14–1.30V  Organization ­ 16M wo

Rating: 1 ★ (5 votes)

AOSN32128 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS 2.0 and Halogen-Free Compl

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud

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PAW3212DB-TJDT ULTRA LOW POWER WIRELESS MOUSE SENSOR PAW3212DB-TJDT General Description The PixArt PAW3212DB-TJDT is optimized for red LED based wir

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

White Electronic Designs 128Kx32 CMOS High Speed Static RAM FEATURES n n EDI8L32128C DESCRIPTION The EDI8L32128C is a high speed, high performance,

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