3212 Datasheet | Specifications & PDF Download

KP321XB 、 PWM ⚫ 650V MOSFET ⚫ 、 ⚫ 、 ⚫ ⚫ 12V (FB ) ⚫ <50mW ⚫ ⚫ ⚫ ： ■ (OLP) ■ (OCP) ■ (OVP) ■ VDD 、 ⚫ SOP-8 DIP-8 ⚫ ⚫ KP321XB P

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Not Recommended For New Designs REF3212-EP, REF3220-EP, REF3225-EP REF3230-EP, REF3233-EP, REF3240-EP www.ti.com SBVS078B – OCTOBER 2006 – REVISED A

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www.ti.com REF3212, REF3220 REF3225, REF3230 REF3233, REF3240 SBVS058C – JUNE 2005 – REVISED AUGUST 2011 4ppm/°C, 100μA, SOT23-6 SERIES VOLTAGE REFER

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MS2H32120G1 MS2H32120G1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -Hi

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KP321X High Performance Low Cost Off-line PWM Power Switch FEATURES  Integrated with 650V Power MOSFET and HV Startup Circuit  Multi-Mode Control w

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PAW3212DB-TJDT ULTRA LOW POWER WIRELESS MOUSE SENSOR PAW3212DB-TJDT General Description The PixArt PAW3212DB-TJDT is optimized for red LED based wir

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White Electronic Designs EDI8F32128C 128KX32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES 128Kx32 bit CMOS Static Random Access Memory www.DataSheet4

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E3M0032120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techn

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APL3212A/B/C Li+ Charger Protection IC Features • • • • • • • • • • Provide Input Over-Voltage Protection Programmable Input Over-Current Protection

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SH79F3212 8051 Microcontroller with 8 channels Touch-key input and 12 Bit PWM and 12 Bit ADC 1. Features  8bits micro-controller with Pipe-line st

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MP3212 1.3A, 1MHz Step-up Regulator with Integrated Input Disconnect Switch DESCRIPTION The MP3212 is a high efficiency, fixed frequency, current-mo

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AOSN32128 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS 2.0 and Halogen-Free Compl

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VDS 1200 V C3M0032120J1 ID @ 25˚C 68 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode

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ESMT LPDDR3 SDRAM Feature  Ultra-low-voltage core and I/O power supplies ­ VDD1 = 1.70–1.95V ­ VDD2, VDDCA, VDDQ = 1.14–1.30V  Organization ­ 16M wo

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24-BIT BUS EXCHANGE SWITCH Integrated Device Technology, Inc. IDT74FST163212 ADVANCE INFORMATION FEATURES: • Bus switches provide zero delay paths •

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. ww

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ESMT LPDDR3 SDRAM Feature  Ultra-low-voltage core and I/O power supplies ­ VDD1 = 1.70–1.95V ­ VDD2, VDDCA, VDDQ = 1.14–1.30V  Organization ­ 16M wo

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IS43/46LD32128B 4Gb (x32) Mobile LPDDR2 S4 SDRAM FEATURES • DDP (Dual Die Package) with 2 x 2Gb LPDDR2 • Low-voltage Core and I/O Power Supplies VDD

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Wuxi Gwok Semiconductor Co.,Ltd GC3M0032120D Silicon Carbide Power MOSFET NN-CChhannel El Enhhaanncceemmeennt tMMooddee Features • VDS 12

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www.DataSheet4U.com K4Q153211M, K4Q153212M 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION CMOS DRAM This is a 524,288 x 32 bit Extended Data

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