.
Hynix Semiconductor
HY27US08121M - (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
Hynix Semiconductor
HY27SSxxx - (HY27USxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
Hynix Semiconductor
HY27US16121M - (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
Hynix Semiconductor
HY27SS08121M - (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
Hynix Semiconductor
HY27SS16121M - (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
Samsung semiconductor
K4X51163PE-LE - 32Mx16 Mobile DDR SDRAM
K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
Integrated Silicon Solution
IS43R86400D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43/46R86400D IS43/46R16320D, IS43/46R32160D NOVEMBER 2012 16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM FEATURES • • • • • • • • • • • • • •.
Integrated Silicon Solution
IS43R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43/46R86400D IS43/46R16320D, IS43/46R32160D NOVEMBER 2012 16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM FEATURES • • • • • • • • • • • • • •.
Integrated Silicon Solution
IS46R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43/46R86400D IS43/46R16320D, IS43/46R32160D NOVEMBER 2012 16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM FEATURES • • • • • • • • • • • • • •.
Integrated Silicon Solution
IS46R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43/46R86400D IS43/46R16320D, IS43/46R32160D NOVEMBER 2012 16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM FEATURES • • • • • • • • • • • • • •.
FIDELIX
FMD8C16LAx-25Ex - 512M(32Mx16) Low Power DDR SDRAM
FMD8C16LAx–25Ex 512M(32Mx16) Low Power DDR SDRAM Rev. 0.2, Jul. ‘12 Revision 0.2 Jul. 2012 1 Document Title 512M(32Mx16) Low Power DDR SDRAM Revi.
White Electronic
W3E232M16S-XSTX - 2x32Mx16bit DDR SDRAM
White Electronic Designs 2x32Mx16bit DDR SDRAM FEATURES Double-data-rate architecture; two data transfers per clock cycle Data rate = 200, 266, 333, 4.
Samsung Electronics
K4X51163PG-FGC8 - 32Mx16 Mobile DDR SDRAM
Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) www.DataSheet4U.com -1- Revision 1.0 May 2008 Final K.
Integrated Silicon Solution
IS43R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43/46R86400D IS43/46R16320D, IS43/46R32160D NOVEMBER 2012 16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM FEATURES • • • • • • • • • • • • • •.
Samsung semiconductor
K4X51163PE-FG - 32Mx16 Mobile DDR SDRAM
K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
Samsung Electronics
K4X51163PG-FGC6 - 32Mx16 Mobile DDR SDRAM
Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) www.DataSheet4U.com -1- Revision 1.0 May 2008 Final K.
Samsung Electronics
K4X51163PG-FGC7 - 32Mx16 Mobile DDR SDRAM
Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) www.DataSheet4U.com -1- Revision 1.0 May 2008 Final K.
Integrated Silicon Solution
IS46R86400D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43/46R86400D IS43/46R16320D, IS43/46R32160D NOVEMBER 2012 16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM FEATURES • • • • • • • • • • • • • •.