3418 Datasheet | Specifications & PDF Download

NCP3418, NCP3418A Dual Bootstrapped 12 V MOSFET Driver with Output Disable The NCP3418 and NCP3418A are dual MOSFET gate drivers optimized to drive t

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1.8°42mm Hybrid Stepper Motor General Specifications Item Step Angle Step Angle Accuracy Resistance Accuracy Inductance Accuracy Te

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www.DataSheet4U.com NCP3418B MOSFET Driver with Dual Outputs for Synchronous Buck Converters The NCP3418B is a single Phase 12 V MOSFET gate driver o

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PD - 95516A HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l IRFR3418PbF IRFU3418PbF 14m: VDSS 80V RDS(on) Max ID

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Dual Bootstrapped 12 V MOSFET Driver with Output Disable ADP3418 FEATURES All-In-One Synchronous Buck Driver Bootstrapped High-Side Drive 1 PWM Signal

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NCP3418, NCP3418A Dual Bootstrapped 12 V MOSFET Driver with Output Disable The NCP3418 and NCP3418A are dual MOSFET gate drivers optimized to drive t

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PD - 94452 HEXFET® Power MOSFET l IRFR3418 IRFU3418 ID 30A Applications High frequency DC-DC converters VDSS 80V RDS(on) Max 14m: Benefits Low G

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Standard T-1¾ LED Lamps FEATURES • Excellent on/off contrasts • Choice of diffused or color clear lens • Other colors/materials available • Option of

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Features n High Efficiency: Up to 95% n 8A Output Current n 2.25V to 5.5V Input Voltage Range n Low RDS(ON) Internal Switch: 35mΩ n Tracking Inpu

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Dual Bootstrapped, 12 V MOSFET Driver with Output Disable ADP3418 FEATURES All-in-one synchronous buck driver Bootstrapped high-side drive 1 PWM signa

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0.1-3GHz SP8T Diversity Switch AW13418 Nov 2017 V1.1 FEATURES GENERAL DESCRIPTION  Broadband frequency range: 0.1 to 3.0 GHz  Low insertion loss

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Order this document by MC34181/D MC34181,2,4 Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers Quality bipolar fabrication

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ESMT EML3418 1.3MHz 2A, Synchronous Step-Down Regulator General Description EML3418 is designed with high efficiency step down DC/DC converter for

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2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High sp

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UNISONIC TECHNOLOGIES CO., LTD UT3418 3.8A, 30V N-CHANNEL ENHANCEMENT MODE 3 Power MOSFET 3  DESCRIPTION The UTC UT3418 is N-channel enhancemen

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PD - 95516A HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l IRFR3418PbF IRFU3418PbF 14m: VDSS 80V RDS(on) Max ID

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Order this document by MC34181/D MC34181,2,4 Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers Quality bipolar fabrication

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Freescale AO3418/MC3418 N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typ

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2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 m typ. • 4 V gate drive device • High speed s

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