IRFR3418 Datasheet - International Rectifier

IRFR3418 HEXFET Power MOSFET

PD - 94452 HEXFET® Power MOSFET l IRFR3418 IRFU3418 ID 30A Applications High frequency DC-DC converters VDSS 80V RDS(on) Max 14m: Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR3418 I-Pak IRFU3418 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C dv/dt TJ.

IRFR3418 Features

* 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M

IRFR3418_InternationalRectifier.pdf