35N08 Datasheet | Specifications & PDF Download

OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 35N08 ·FEATURES ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltag

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OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

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OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS

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OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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Types 380L, 382L, 380LX & 382LX, 85 ЊC High-Capacitance Snap-In Types 380L/LX & 4-pin Mount 382LX (85 °C) The excellent value of Type 380L/LX capacito

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isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalan

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OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS

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Type 381LX / 383LX 105 °C High Ripple, Snap-In Aluminum High Ripple, Long Life, 2, 4 and 5 pin styles available Specifications Temperature Range Rate

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