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IPD135N08N3, IPD135N08N3G Power-Transistor

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Description

OptiMOS(TM)3 Power-Transistor .

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This datasheet PDF includes multiple part numbers: IPD135N08N3, IPD135N08N3G. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IPD135N08N3, IPD135N08N3G
Manufacturer
Infineon ↗
File Size
354.99 KB
Datasheet
IPD135N08N3G-Infineon.pdf
Description
Power-Transistor
Note
This datasheet PDF includes multiple part numbers: IPD135N08N3, IPD135N08N3G.
Please refer to the document for exact specifications by model.

Features

* Ideal for high frequency switching
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to JEDEC

Applications

* Halogen-free according to IEC61249-2-21 Type IPD135N08N3 G IPD135N08N3 G Product Summary VDS RDS(on),max ID 80 V 13.5 mW 45 A Package Marking PG-TO-252-3 135N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T

IPD135N08N3 Distributors

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