Description
OptiMOS(TM)3 Power-Transistor .
Features
* Ideal for high frequency switching
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to JEDEC
Applications
* Halogen-free according to IEC61249-2-21
Type
IPD135N08N3 G
IPD135N08N3 G
Product Summary VDS RDS(on),max ID
80 V 13.5 mW 45 A
Package Marking
PG-TO-252-3 135N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T