IPD12CNE8NG Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for target application Product Summary
Datasheet Details
IPD12CNE8NG, IPB-12CNE
Infineon ↗ Technologies
595.67 KB
Power-transistor.
This datasheet PDF includes multiple part numbers: IPD12CNE8NG, IPB-12CNE.
Please refer to the document for exact specifications by model.
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