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IPD12CN10N - Power-Transistor

IPD12CN10N Description

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor .

IPD12CN10N Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Quali

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Power-Transistor Infineon
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