IPD12CN10N Datasheet - Infineon

IPD12CN10N, Power-Transistor

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor .

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IPD12CN10N-Infineon.pdf

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Datasheet Details

Part number:

IPD12CN10N

Manufacturer:

Infineon ↗

File Size:

858.83 KB

Description:

Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Quali

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IPD12CN10N Power-Transistor Infineon

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