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IPD110N12N3, IPD110N12N3G - MOSFET

IPD110N12N3 Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev.2.

IPD110N12N3 Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IPD110N12N3, IPD110N12N3G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IPD110N12N3, IPD110N12N3G
Manufacturer
Infineon ↗
File Size
573.47 KB
Datasheet
IPD110N12N3G-Infineon.pdf
Description
MOSFET
Note
This datasheet PDF includes multiple part numbers: IPD110N12N3, IPD110N12N3G.
Please refer to the document for exact specifications by model.

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MOSFET Infineon
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