IPD110N12N3, IPD110N12N3G MOSFET

Infineon

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev.2.

📥 Download Datasheet

IPD110N12N3 Datasheet Preview — This datasheet PDF includes multiple part numbers: IPD110N12N3, IPD110N12N3G. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IPD110N12N3, IPD110N12N3G
Manufacturer: Infineon ↗
File Size: 573.47 KB
Datasheet: IPD110N12N3G-Infineon.pdf
Description: MOSFET
Note: This datasheet PDF includes multiple part numbers: IPD110N12N3, IPD110N12N3G.
Please refer to the document for exact specifications by model.

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo

IPD110N12N3 Distributors

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