* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo
IPD110N12N3G Datasheet (573.47 KB)
IPD110N12N3G
573.47 KB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 120V
OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G
Data Sheet
Rev. 2.
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