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IPD122N10N3G - Power-Transistor

IPD122N10N3G Description

IPD122N10N3 G OptiMOSTM3 Power-Transistor .

IPD122N10N3G Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) f

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Power-Transistor Infineon
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