IPD122N10N3 - N-Channel MOSFET
IPD122N10N3 Features
* Static drain-source on-resistance: RDS(on)≤12.2mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High frequency switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V
