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IPD122N10N3 Datasheet - INCHANGE

IPD122N10N3 N-Channel MOSFET

IPD122N10N3 Features

* Static drain-source on-resistance: RDS(on)≤12.2mΩ

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* High frequency switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V

IPD122N10N3-INCHANGE.pdf

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Datasheet Details

Part number:

IPD122N10N3

Manufacturer:

INCHANGE

File Size:

238.31 KB

Description:

N-channel mosfet.

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IPD122N10N3 IPD122N10N3 N-Channel MOSFET INCHANGE

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