IPD122N10N3 Datasheet - INCHANGE

IPD122N10N3, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 *.

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IPD122N10N3-INCHANGE.pdf

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Datasheet Details

Part number:

IPD122N10N3

Manufacturer:

INCHANGE

File Size:

238.31 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤12.2mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High frequency switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPD122N10N3 N-Channel MOSFET INCHANGE

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