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IPD180N10N3 Datasheet - INCHANGE

IPD180N10N3 N-Channel MOSFET

IPD180N10N3 Features

* Static drain-source on-resistance: RDS(on)≤18mΩ

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* High frequency switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL

IPD180N10N3-INCHANGE.pdf

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Datasheet Details

Part number:

IPD180N10N3

Manufacturer:

INCHANGE

File Size:

238.35 KB

Description:

N-channel mosfet.

IPD180N10N3 Distributor

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IPD180N10N3 IPD180N10N3 N-Channel MOSFET INCHANGE