Part number:
IPD100N06S4-03
Manufacturer:
File Size:
160.02 KB
Description:
Power-transistor.
* N-channel - Enhancement mode
* AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* Green Product (RoHS compliant)
* 100% Avalanche tested
* Ultra Low RDSon
* Ultra High ID IPD100N06S4-03 Product Summary
IPD100N06S4-03 Datasheet (160.02 KB)
IPD100N06S4-03
160.02 KB
Power-transistor.
📁 Related Datasheet
IPD100N04S4-02 - Power-Transistor
(Infineon)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.
IPD105N03LG - Power Transistor
(Infineon)
Kg_T
% # % ' #
% # % ) #
%&$ # %
IPD10N03LA - OptiMOS2 Power-Transistor
(Infineon Technologies)
IPD10N03LA IPS10N03LA
IPF10N03LA IPU10N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to.
IPD110N12N3 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 120V
OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G
Data Sheet
Rev. 2.
IPD110N12N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanch.
IPD110N12N3G - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 120V
OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G
Data Sheet
Rev. 2.
IPD122N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤12.2mΩ ·Enhancement mode: ·100% avalan.
IPD122N10N3 - Power-Transistor
(Infineon)
IPD122N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.