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IPD135N08N3G - Power-Transistor

IPD135N08N3G Description

OptiMOS(TM)3 Power-Transistor .

IPD135N08N3G Features

* Ideal for high frequency switching
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to JEDEC

IPD135N08N3G Applications

* Halogen-free according to IEC61249-2-21 Type IPD135N08N3 G IPD135N08N3 G Product Summary VDS RDS(on),max ID 80 V 13.5 mW 45 A Package Marking PG-TO-252-3 135N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T

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Power-Transistor Infineon
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