www.DataSheet4U.com Illuminated Pushbutton Switch.
AEROSEMI
MT3608 - High Efficiency 1.2MHz 2A Step-Up Converter
AEROSEMI FEATURES • Integrated 80mΩ Power MOSFET • 2V to 24V Input Voltage • 1.2MHz Fixed Switching Frequency • Internal 4A Switch Current Limit • Adj.
Infineon
70S360P7 - MOSFET
IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su.
WESTCODE
N1010NC360 - Phase Control Thyristor
WESTCODE Date:- 24 Oct, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N1010NC300 to N1010NC380 Absolute Maximum Ratings VDRM VDSM VRRM V.
Fairchild Semiconductor
FGD4536 - 360V PDP IGBT
FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5.
Chipown
PN8360 - High Precision CC/CV Primary-Side Converter
PN8360 Chipown High Precision CC/CV Primary-Side Converter General Description The PN8360 consists of a high precision CC/CV primary side controller.
IXYS
M0225YH360 - Soft Recovery Diode
WESTCODE An IXYS Company Date:- 8 Jun, 2004 Data Sheet Issue:- 1 Soft Recovery Diode Types M0225YH300 to M0225YH450 Old Type No.: SM30-45HXC084 Abs.
ZORAN
ZR36015 - RASTER TO BLOCK CONVERTER
ZR36015 PRELIMINARY RASTER TO BLOCK CONVERTER FEATURES s s s s s Real Time Raster to/from Block Conversion 1/2 Decimation Processing in the Horizont.
Won-Top Electronics
SR360 - 3.0A SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power L.
MagnaChip
MMF60R360P - N-channel MOSFET
MMF60R360P Datasheet MMF60R360P 600V 0.36Ω N-channel MOSFET Description MMF60R360P is power MOSFET using magnachip’s advanced super junction techno.
TDK
C0402C0G1C360G - Multilayer Ceramic Chip Capacitors
C Series General Application Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] .
New Japan Radio
JRC2360 - NJM2360
NJM2360 DC/DC CONVERTER CONTROL IC ■ GENERAL DESCRIPTION The NJM2360 is a DC to DC converter control IC. Due to the internalization of a high curren.
Unigroup
TPA65R360M - 650V Super-Junction Power MOSFET
TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l Very low FOM RDS.
INCHANGE
IRFB3607 - TO-220 N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607，IIRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement .
INCHANGE
MMF60R360P - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.
Texas Instruments
TLV3602 - High-Speed Comparators
TLV3601, TLV3602, TLV3603, TLV3603E SNOSDB1E – JUNE 2021 – REVISED APRIL 2023 TLV360x 325 MHz High-Speed Comparators with 2.5 ns Propagation Delay 1 .
Alpha & Omega Semiconductors
AOD360A70 - 700V N-Channel Power Transistor
AOD360A70/AOI360A70 700V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switchi.
JILIN SINO
MS65R360 - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET MS65R360 MAIN CHARACTERISTICS ID VDSS Rdson-max （@Vgs=10V） Qg-typ 11A 650 V 0.40Ω 22 nC Package LED APPLICA.
Sinopower
SM7360EKQG - Dual N-Channel MOSFET
SM7360EKQG ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 (ESD Protection) 30V/83A, RDS(ON) = 3mW (max.) @ VGS = 10V RDS(ON) = 5.6mW .
Dynex Semiconductor
MP03HBN360-10 - Thyristor/Diode Module
MP03XXX360 MP03XXX360 Dual Thyristor, Thyristor/Diode Module Replaces June 2001 version, DS4484-6.1 FEATURES s Dual Device Module s Electrically Iso.
IXYS
K0682LC360 - Medium Voltage Thyristor
WESTCODE An IXYS Company Date:- 29 Mar, 2007 Data Sheet Issue:- 1 Provisional Data Medium Voltage Thyristor Type K0682LC360 to K0682LC420 Developmen.