360 Datasheet | Specifications & PDF Download

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IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

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HY3606P/B N-Channel Enhancement Mode MOSFET Features • 60V/162A RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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AEROSEMI FEATURES • Integrated 80mΩ Power MOSFET • 2V to 24V Input Voltage • 1.2MHz Fixed Switching Frequency • Internal 4A Switch Current Limit • Adj

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3 mm (T1) LED, Diffused LR 3360, LS 3360, LO 3360, LY 3360, LG 3360, LP 3360 fBesondere Merkmale • Gehäusetyp: eingefärbtes, diffuses 3 mm (T1) Gehäu

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ZXLD1360 1A LED driver with internal switch Description The ZXLD1360 is a continuous mode The ADJ pin will accept either a DC voltage or a inductiv

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ChipSourceTek WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceTek.com Tony.Wang@ChipSourceTek.com ChipSourceTek WEB:Http://www.ChipSourceTek

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Silan Microelectronics SVS60R360FJH(FJD)(D)(L8A)E3_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS60R360FJH(FJD)(D)(L8A)E3 i

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3 mm (T1) LED, Diffused LR 3360, LS 3360, LO 3360, LY 3360, LG 3360, LP 3360 fBesondere Merkmale • Gehäusetyp: eingefärbtes, diffuses 3 mm (T1) Gehäu

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HITANO ENTERPRISE CORP. Data Sheet Customer: Product: Multilayer Chip Varistor. C series wide range application Size : 0402/0603/0805/1206/1210/18

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MotionKing (China) Motor Industry Co., Ltd. HB Stepper Motor Catalog 2 Phase Hybrid Stepper Motor 14H2K series-Size 35mm(0.9 degree) Wiring Diagram

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N-Channel 60 V (D-S) MOSFET DTQ3608 www.din-tek.jp PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0113 at VGS = 10 V 0.0143 at VGS = 4.5 V ID (A)a, e 3

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Preliminary GS81320Z18/36CQ-333M/250M(S/Q/V) GS8680Z18/36CQ-333M/250M(S/Q/V) GS8360Z18/36CQ-333M/250M(S/Q/V) 100-Pin Ceramic QFP Rad-Hard SRAM Mili

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5 mm (T1 ¾) LED, Diffused Lead (Pb) Free Product - RoHS Compliant LS 5360, LY 5360, LG 5360 LG_LS_LY5360 abgekündigtnachOS-PD-2006-009werden durch LG_

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1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with hi

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SB320 THRU SB390 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 90 Volts Forward Current - 3.0 Amperes DO-201AD 0.210(5.3) 0.190(4.8) DIA. 1

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PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in

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SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3600U EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Noise Figure, High Gain.

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DP2360 Highly Integrated Offline Current Mode PWM Power Switch FEATURES  Integrated with 650V Power MOSFET  ±1% CV Regulation  Less than 75mW Stan

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FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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