3904 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 2N3903 2N3904* *Motorola Preferred Device 2 BASE 1 EMITT

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SILICON NPN DUAL TRANSISTORS 2N3904DCSM Features: • Hermetic Ceramic Surface Mount Package • Designed For General Purpose and Switching Applications •

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3904CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 15 1999 A

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P2N3904N NPN GENERAL PURPOSE SWITCHING TRANSISTOR Voltage 40V Current 0.2A Features  Silicon NPN, Planar design  Low Vce(sat) 0.2V(max)@Ic/Ib=

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2N3904-T18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) GENERAL PURPOSE HERMETIC NPN SILICON TRANSI

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General Purpose Transistors NPN Silicon 2N3903, 2N3904 Features • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 3 2 BASE 1 EMIT

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Feature ¾ This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 1 - Base PT23T3904 Transistor 3 - Collector 2 - Emitter Mechanical Cha

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2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier October 2014 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This

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Features  Complementary PNP Type Available (DIODES™ MMBT3906)  Ideal for Medium Power Amplification and Switching  Totally Lead-Free & Fully RoHS C

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30V N-Channel MOSFETs PDC3904Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3

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FEATURES „ Power dissipation, PCM:0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage junct

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www.DataSheet4U.com CORPORATION Description Features ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C G2N3904 N P N E P I TA X I A L P L A N A R

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MMBT3904AT NPN Transistor Features ■ Complementary to MMBT3906AT ■ Small Package Absolute Maximum Ratings (TA = 25 °C unless otherwise noted) Param

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=3

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MMBT3904 Silicon NPN Transistor General Purpose Amp, Surface Mount Description: The MMBT3904 is a silicon NPN transistor in a SOT−23 type surface mou

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MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 250 mWatts DFN 3L FEATURES 0.042(1.05) 0.037(0.95) 0.026(0.65) 0.021

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