3904 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 2N3903 2N3904* *Motorola Preferred Device 2 BASE 1 EMITT

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . FEATURES . Low Leakage Current : ICE

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® 2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code 2N3904 2N3904-AP Marking Package / Shipment 2N3904 TO-92 / Bulk 2N3904 TO-92 /

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2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier October 2014 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This

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ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3

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2N3904 General Purpose Transistors NPN TO-92 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exh

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2N3903 2N3904 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 devices are silic

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NPN General - Purpose Amplifier 2N3904 Description This device is designed as a general−purpose amplifier and switch. The useful dynamic range extend

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General Purpose Transistors NPN and PNP Silicon MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP These transistors are de

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General Purpose Transistors NPN and PNP Silicon MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP These transistors are de

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MMDT3904Q 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features  Epitaxial Planar Die Construction  Ideal for Medium Power Amplification and Swit

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UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc(max

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2N3904G Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ，，。 Low current,

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2N3904 Silicon NPN Transistor General Purpose TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . .

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3904 NPN switching transistor Product data sheet Supersedes data of 2002 Oct 04 2004

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www.DataSheet4U.com DST3904DJ 40V DUAL NPN SURFACE MOUNT TRANSISTOR Features • • • • • • • VCEO = 40V IC = 200mA Epitaxial Planar Die Construction

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HI-SINCERITY MICROELECTRONICS CORP. H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Pag

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 15 1999 A

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www.DataSheet4U.com PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPO SE TRANSISTO R • TO-92 SOT-23 • Collector-Emitter Voltage: VCEO = 40V

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2N3904-T18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) GENERAL PURPOSE HERMETIC NPN SILICON TRANSI

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