396-channel Datasheet | Specifications & PDF Download

30V N-Channel MOSFETs PDC3964X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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www.DataSheet4U.com 19-3644; Rev 0; 5/05 1.5V to 3.6V, 312.5ksps, 1-Channel True-Differential/ 2-Channel Single-Ended, 12-Bit, SAR ADCs General Desc

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www.DataSheet4U.com SPFD54124B 396-channel 6-bit Source Driver with System-on-chip for Color Amorphous TFT-LCDs Preliminary APR. 26, 2007 Version 0.

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Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor ■

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30V N-Channel MOSFETs PDD3964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V N-Channel MOSFETs PDD3960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V N-Channel MOSFETs PDP3960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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GSMDC3960X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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NTE2396 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Current Sense D +175°C Operati

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Preliminary www.DataSheet4U.com Datasheet RJK0396DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V g

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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SSG4396N Elektronische Bauelemente 4.4A, 150V, RDS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal

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B3965D N- and P-Channel 40-V (D-S) MOSFET General Description The B3965D is the N- and P-Channel logic enhancement mode power field effect transistor

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Analog Power N-Channel 150-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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