396-channel Datasheet | Specifications & PDF Download

www.DataSheet4U.com SPFD54124B 396-channel 6-bit Source Driver with System-on-chip for Color Amorphous TFT-LCDs Preliminary APR. 26, 2007 Version 0.6

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www.DataSheet4U.com SPFD54124B 396-channel 6-bit Source Driver with System-on-chip for Color Amorphous TFT-LCDs Preliminary APR. 26, 2007 Version 0.

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B3965D N- and P-Channel 40-V (D-S) MOSFET General Description The B3965D is the N- and P-Channel logic enhancement mode power field effect transistor

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30V N-Channel MOSFETs PDC3964X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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n-chalrlnel JFET designed· for • • • • Analog iwitches • Choppers • Commutc:ifors H Performance Curves NH See Section 4 BENEFITS • Low Insertion Los

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InterFET Product Folder Technical Support Order Now 2N3969 2N3969 N-Channel JFET Features • InterFET N0016H Geometry • Low Noise: 5 nV/√Hz Typic

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Analog Power N-Channel 150-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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—PRELIMINARY— HD66765 396-channel Segment Driver with Internal RAM for 4096-color Displays nTarget Specification tio Rev.0.1 January, 2001 cificaDescr

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HD66770 Rev.1.1 / April 2002 HD66770 396-channel Source Driver with Internal RAM for TFT 65536-color Displays Rev.1.1 mApril 2002 .coDescription U

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Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor ■

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www.DataSheet4U.com 19-3644; Rev 0; 5/05 1.5V to 3.6V, 312.5ksps, 1-Channel True-Differential/ 2-Channel Single-Ended, 12-Bit, SAR ADCs General Desc

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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30V N-Channel MOSFETs PDD3964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V N-Channel MOSFETs PDD3960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 600V RDS(on) (max) 44 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 600V • On-Re

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JANSR2N7396 Formerly FSL230R4 June 1998 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil

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