3971 Datasheet | Specifications & PDF Download

FEATURES n Ultralow Quiescent Current: 2.8μA IQ Regulating 12VIN to 3.3VOUT n Fixed Output Voltages: 5V 2.2μA IQ Regulating 12VIN to 5VOUT n Low Rippl

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FEATURES n Ultralow Quiescent Current: 2.8µA IQ Regulating 12VIN to 3.3VOUT n Fixed Output Voltages: 3.3V, 5V, 2.1µA IQ Regulating 12VIN to 3.3VOUT

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FEATURES n Ultralow Quiescent Current: 2.8μA IQ Regulating 12VIN to 3.3VOUT n Fixed Output Voltages: 5V 2.2μA IQ Regulating 12VIN to 5VOUT n Low Rippl

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FEATURES n Ultralow Quiescent Current: 2.8µA IQ Regulating 12VIN to 3.3VOUT n Fixed Output Voltages: 3.3V, 5V, 2.1µA IQ Regulating 12VIN to 3.3VOUT

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FEATURES n Ultralow Quiescent Current: 2.8µA IQ Regulating 12VIN to 3.3VOUT n Fixed Output Voltages: 3.3V, 5V, 2.1µA IQ Regulating 12VIN to 3.3VOUT

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www.DataSheet4U.com 19-2086; Rev 1; 12/02 +3.3V, 10.3Gbps Limiting Amplifier General Description The MAX3971 is a compact, low-power, 10.3Gbps limiti

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A Product Line of Diodes Incorporated AP3965/66/71 PRIMARY SIDE POWER SWITCHER FOR FLYBACK/NON-ISOLATED BUCK SMPS Description The AP3965/66/71 consis

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LP3971 www.ti.com SNVS432V – JANUARY 2006 – REVISED MAY 2013 LP3971 Power Management Unit for Advanced Application Processors Check for Samples: LP

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Data Sheet 29319.32 3971 ADVANCE INFORMATION (Subject to change without notice) May 2, 2000 DUAL DMOS FULL-BRIDGE DRIVER Designed to interface bet

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LP3971 Power Management Unit for Advanced Application Processors January 2006 LP3971 Power Management Unit for Advanced Application Processors Gener

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Power Transistors 2SC3971, 2SC3971A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10.0±0

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DATA SHEET 2N3970 2N3971 2N3972 N-CHANNEL JFET JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3970 series types are N-Channel Junction Fie

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3971 ADVANCE INFORMATION (Subject to change without notice) May 2, 2000 DUAL DMOS FULL-BRIDGE DRIVER Designed to interface between external PWM contr

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: MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation (a TA = 25

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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Power Transistors 2SC3971, 2SC3971A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10.0±0

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