3SK296 Silicon N-Channel Dual Gate MOS FET ADE-20.
Hitachi Semiconductor
3SK296 - Silicon N-Channel Dual-Gate MOSFET
3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f.
