| Part Number | Description | Manufacture |
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NPN Transistor perature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CON |
 INCHANGE |
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NPN Transistor 3 2 1 power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Co |
 LGE |
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product TO-3PB ORDER MESSAGE Order codes 3DD13009K-O-C-N-B 3DD13009K-O-AB-N-B Marking D13009K D13009K Halogen Free NO NO Package TO-220C |
 JILIN SINO-MICROELECTRONICS |
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13009N-O-C-N-B 3DD13009N-O-AN-N-B 3DD13009N-O-AB-N-B Halogen Free NO NO NO Marking D13009N D13009 |
JILIN SINO-MICROELECTRONICS |
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Silicon NPN Transistor |
 Huajing Microelectronics |
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Silicon NPN bipolar transistor |
Huajing Microelectronics |
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NPN Transistor ed trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Volt |
INCHANGE |
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Silicon NPN Transistor |
 ETC |
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13009NL-O-C-N-B 3DD13009NL-O-AN-N-B 3DD13009NL-O-AB-N-B Halogen Free NO NO NO Marking D13009NL D1 |
JILIN SINO-MICROELECTRONICS |
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Silicon NPN bipolar transistor |
Huajing Microelectronics |
| Total 20 results |
