3DD13009 Description
·Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time.
3DD13009 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
LGE |
3DD13009 | NPN Transistor |
Galaxy Microelectronics |
3DD13009 | NPN Silicon Epitaxial Planar Transistor |
Huajing Microelectronics |
3DD13009A8 | Silicon NPN Transistor |
Huajing Microelectronics |
3DD13009A9 | Silicon NPN bipolar transistor |
Huajing Microelectronics |
3DD13009AN | Silicon NPN Transistor |
·Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time.