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3DD13009 - NPN Transistor

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Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL

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Datasheet Details

Part number 3DD13009
Manufacturer INCHANGE
File Size 212.12 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
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