Datasheet4U Logo Datasheet4U.com

3DD13009 - NPN Transistor

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3DD13009 NPN Transistor LGE
3DD13009 NPN Transistor Dayan Technology
3DD13009 NPN Silicon Epitaxial Planar Transistor GME
3DD13009A8 Silicon NPN Transistor Huajing Microelectronics
3DD13009A9 Silicon NPN bipolar transistor Huajing Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
3DD13009K NPN Transistor
3DD13009N NPN Transistor
3DD13009NL NPN Transistor
3DD100A NPN Transistor
3DD100B NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.