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3DD13009 Datasheet Preview

3DD13009 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD13009
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 1.5 (Max) @ IC= 8.0A
·Switching Time
: tf= 0.7μs(Max.)@ IC= 8.0A
·100% tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switch mode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
24
A
IB
Base Current
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
6
A
130
W
150
Tstg
Storage Temperature Range
-65~150
isc websitewww.iscsemi.com
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isc & iscsemi is registered trademark




INCHANGE

3DD13009 Datasheet Preview

3DD13009 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD13009
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 3A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A ;IB= 1A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A ;IB= 1.6A
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5 A; VCE= 10V;
COB
Output Capacitance
IE= 0; VCB= 10V; ftest = 0.1MHz
Switching Times; Resistive Load
Ton
Turn ON Time
ts
Storage Time
IC= 8A; VCC= 125V;
IB1= IB2= 1.6A; RL=15.6Ω;
tf
Fall Time
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
3.0
V
1.2
V
1.6
V
0.1 mA
8
40
6
30
4
MHz
180
pF
1.1 μs
3.0 μs
0.7 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2
isc & iscsemi is registered trademark



Part Number 3DD13009
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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