Download 3DD13009 Datasheet PDF
3DD13009 page 2
Page 2

Datasheet Summary

isc Silicon NPN Power Transistor INCHANGE Semiconductor DESCRIPTION - Collector- Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) - Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A - Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A - 100% tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection...
3DD13009 reference image

Representative 3DD13009 image (package may vary by manufacturer)