3DD13009 Datasheet and Specifications PDF
The 3DD13009 is a NPN Transistor.
| Part Number | 3DD13009 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A ·100% tested ·Minimum Lot-to-. perature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Vo. |
| Part Number | 3DD13009 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | LGE |
| Overview | 3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC P. 3 2 1 power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Sto. |
| Part Number | 3DD13009 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
NPN Silicon Epitaxial Planar Transistor 3DD13009
Features
Low switch loss Low reverse leakage current Good high temperature characteristics
Mechanic al Data
Case: TO-220AB Molding compound:.
* Low switch loss * Low reverse leakage current * Good high temperature characteristics Mechanic al Data * Case: TO-220AB * Molding compound: UL flammability classification rating 94V-0 * Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 TO-220AB Ordering Information Part Number 3. |