RX65T300HS2A (ETC)
650V GaN Power Transistor
RX65T300HS2A
650V GaN Power Transistor (FET)
Features
• Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit
(38 views)
MRF8S9260HSR3 (Freescale Semiconductor)
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarr
(37 views)
MP44010HS (MPS)
Boundary Mode PFC Controller
The Future of Analog IC Technology
DESCRIPTION
The MP44010 is a boundary conduction mode PFC controller which can provide simple and high performance
(34 views)
G50N60HS (Infineon)
High Speed IGBT
SGW50N60HS
www.DataSheet4U.com
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation • Short circuit withstand time –
(33 views)
MRF8P9300HSR6 (Freescale Semiconductor)
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF8P9300H Rev. 0, 11/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode
(33 views)
MRF8S18120HSR3 (Freescale Semiconductor)
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF8S18120H Rev. 0, 9/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode
(31 views)
MRF8S9100HSR3 (Freescale Semiconductor)
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF8S9100H Rev. 0, 9/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode
(31 views)
OPR2100HS (TT)
Six-Element SMD Photodiode Array
Six-Element SMD Photodiode
Array
OPR2100, OPR2100T, OPR2100HS, OPR2100HST
Features: Six-PIN photodiode array High-temperature chip carrier Close
(31 views)
MRF5S21090HSR3 (Freescale Semiconductor)
RF Power Field Effect Transistors
www.DataSheet4U.com
Freescale Semiconductor Technical Data
MRF5S21090H Rev. 1, 12/2004
RF Power Field Effect Transistors
N - Channel Enhancement -
(29 views)
MRFE6S9200HSR3 (Motorola Semiconductor Products)
RF Power FET
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commerc
(29 views)
G30N60HS (Infineon)
High Speed IGBT
SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
• D
(29 views)
MRFE6S9130HSR3 (Freescale Semiconductor)
RF Power FET
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and
(28 views)
MRF6V10250HSR3 (Freescale Semiconductor)
RF Power Field Effect Transistor
Freescale Semiconductor Technical Data
Document Number: MRF6V10250HS Rev. 0, 2/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode
(28 views)
MRF7S19170HSR3 (Freescale Semiconductor)
RF Power Field Effect Transistors
www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRF7S19170H Rev. 0, 10/2006
RF Power Field Effect Transistors
N - Chan
(28 views)
MRF8S19140HSR3 (Freescale Semiconductor)
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF8S19140H www.DataSheet4U.com Rev. 0, 5/2010
RF Power Field Effect Transistors
N--Channel
(28 views)
MRFE6VP5600HSR6 (Freescale Semiconductor)
RF Power Field Effect Transistors
www.DataSheet.co.kr
Freescale Semiconductor Technical Data
Document Number: MRFE6VP5600H Rev. 1, 1/2011
RF Power Field Effect Transistors
High Rugg
(28 views)
MMBD7000HS (Diodes)
DUAL SURFACE MOUNT SWITCHING DIODE
MMBD7000HS /HC
DUAL SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion Fo
(28 views)
MRF13750HS (NXP)
RF Power LDMOS Transistors
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed fo
(27 views)
K30N60HS (Infineon)
SKW30N60HS
SKW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for o
(27 views)
MRF6S19100HSR3 (Freescale Semiconductor)
RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF6S19100H Rev. 3, 8/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode
(27 views)
