G30N60HS
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High speed igbt.
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G30N60A4D - SMPS Series N-Channel IGBT
(Fairchild Semiconductor)
HGTG30N60A4D
Data Sheet September 2004
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high volta.
G30N60B3 - NPT IGBT
(Fairchild Semiconductor)
HGTG30N60B3
Data Sheet November 2013
600 V, NPT IGBT
The HGTG30N60B3 bines the best features of high input impedance of a MOSFET and the low on-st.
G30N60B3D - N-Channel IGBT
(Fairchild Semiconductor)
HGTG30N60B3D
Data Sheet
..
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a.
G30N60C3D - N-Channel IGBT
(Intersil Corporation)
..
HGTG30N60C3D
Data Sheet January 2000 File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes.
G30N02 - N-Channel MOSFET
(GOFORD)
GOFORD
Description
The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v.
G30N03 - N-Channel Trench MOSFET
(GOFORD)
G30N03D3
N-Channel Enhancement Mode Power MOSFET
Description
The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate ch.
G30N03D3 - N-Channel Trench MOSFET
(GOFORD)
G30N03D3
N-Channel Enhancement Mode Power MOSFET
Description
The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate ch.
G30N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G30N04D3
N-Channel Enhancement Mode Power MOSFET
Description
The G30N04D3 uses advanced trench technology to
provide excellent RDS(ON) , low gate ch.
G30N04D3 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G30N04D3
N-Channel Enhancement Mode Power MOSFET
Description
The G30N04D3 uses advanced trench technology to
provide excellent RDS(ON) , low gate ch.
G30 - Voltage-Controlled Attenuator Module
(MACOM)
G30/SMG30
Voltage-Controlled Attenuator Module 100 to 2000 MHz
Rev. V3
Features
FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .
