G30N02 - N-Channel MOSFET
G30N02 Features
* VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for high E
