G30N02 Datasheet, Mosfet, GOFORD

G30N02 Features

• Mosfet
• VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good s

PDF File Details

Part number:

G30N02

Manufacturer:

GOFORD

File Size:

1.63MB

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📄 Datasheet

Description:

N-channel mosfet. The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

G30N02 Application

• Applications General Features
• VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A
• High density cell design for ultra low Rdson

TAGS

G30N02

GOFORD

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