G30N02 Datasheet - GOFORD

G30N02, N-Channel MOSFET

GOFORD .
The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Details

Part number:

G30N02

Manufacturer:

GOFORD

File Size:

1.63 MB

Description:

N-Channel MOSFET

Features

* VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for high E

G30N02 Distributors

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G30N02 N-Channel MOSFET GOFORD

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