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G30N02 Datasheet - GOFORD

G30N02 - N-Channel MOSFET

G30N02 Features

* VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technology for high E

G30N02-GOFORD.pdf

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Datasheet Details

Part number:

G30N02

Manufacturer:

GOFORD

File Size:

1.63 MB

Description:

N-channel mosfet.

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