G30N60B3 Datasheet, Igbt, Fairchild Semiconductor

G30N60B3 Features

• Igbt of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate fr

PDF File Details

Part number:

G30N60B3

Manufacturer:

Fairchild Semiconductor

File Size:

396.91kb

Download:

📄 Datasheet

Description:

Npt igbt.

G30N60B3 Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. Features

TAGS

G30N60B3

Fairchild Semiconductor

📁 Related Datasheet

G30N60B3D - N-Channel IGBT (Fairchild Semiconductor)
HGTG30N60B3D Data Sheet .. April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a.

G30N60A4D - SMPS Series N-Channel IGBT (Fairchild Semiconductor)
HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volta.

G30N60C3D - N-Channel IGBT (Intersil Corporation)
.. HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes.

G30N60HS - High Speed IGBT (Infineon)
SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff pared to previous generation • Short circuit withstand time – 10 µs • D.

G30N02 - N-Channel MOSFET (GOFORD)
GOFORD Description The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v.

G30N03 - N-Channel Trench MOSFET (GOFORD)
G30N03D3 N-Channel Enhancement Mode Power MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G30N03D3 - N-Channel Trench MOSFET (GOFORD)
G30N03D3 N-Channel Enhancement Mode Power MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G30N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G30N04D3 N-Channel Enhancement Mode Power MOSFET Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G30N04D3 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G30N04D3 N-Channel Enhancement Mode Power MOSFET Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G30 - Voltage-Controlled Attenuator Module (MACOM)
G30/SMG30 Voltage-Controlled Attenuator Module 100 to 2000 MHz Rev. V3 Features  FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .