G30
MACOM
672.97kb
Voltage-controlled attenuator module. The G30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliab
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📁 Related Datasheet
G3000TF250 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1
Anode Shorted Gate Turn-Off Thyristor Types G3000TF250
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM.
G3000TF450 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 28th April 2013 Data Sheet Issue:- 2
Anode Shorted Gate Turn-Off Thyristor Types G3000TF450
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM.
G300N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300N04D3 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04D3
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04D3 uses advanced trench technology to
provide excellent RDS(ON) , low gate .
G300N04L - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300P06 - P-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G300P06T uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300P06T - P-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G300P06T uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G3018 - N-CHANNEL MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/11/30 REVISED DATE :
G3018
Description Features
N-CHANNEL MOSFET
BVDSS RDS(ON) ID
3.
G3018K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
Pb Free Plating Product
ISSUED DATE :2005/11/11 REVISED DATE :
G3018K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8 640mA
Descrip.
G301K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2006/01/19 REVISED DATE :
G301K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
.