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G3018 N-CHANNEL MOSFET

G3018 Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/30 REVISED DATE : G3018 .
Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance.

G3018 Features

* N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. Package Dimensions REF. A B C D E F Millimeter Mi

G3018 Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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Datasheet Details

Part number
G3018
Manufacturer
GTM
File Size
348.14 KB
Datasheet
G3018_GTM.pdf
Description
N-CHANNEL MOSFET

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