* Simple Drive Requirement
* Small Package Outline
* RoHS Compliant Package Dimensions TPU.34)QBDLBHF
* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1,2 Power Dissip
G3018K
GTM
293.98 KB
N-channel enhancement mode power mosfet.
Pb Free Plating Product
ISSUED DATE :2005/11/11 REVISED DATE :
G3018K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8 640mA
Descrip.
📁 Related Datasheet
G3018 - N-CHANNEL MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/11/30 REVISED DATE :
G3018
Description Features
N-CHANNEL MOSFET
BVDSS RDS(ON) ID
3.
G301K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2006/01/19 REVISED DATE :
G301K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
.
G30 - Voltage-Controlled Attenuator Module
(MACOM)
G30/SMG30
Voltage-Controlled Attenuator Module 100 to 2000 MHz
Rev. V3
Features
FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .
G3000TF250 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1
Anode Shorted Gate Turn-Off Thyristor Types G3000TF250
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM.
G3000TF450 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 28th April 2013 Data Sheet Issue:- 2
Anode Shorted Gate Turn-Off Thyristor Types G3000TF450
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM.
G300N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300N04D3 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04D3
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04D3 uses advanced trench technology to
provide excellent RDS(ON) , low gate .
G300N04L - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
