G3000TF450 Datasheet (352.06 KB)
G3000TF450
IXYS
352.06 KB
Anode shorted gate turn-off thyristor.
Date:- 28th April 2013 Data Sheet Issue:- 2
Anode Shorted Gate Turn-Off Thyristor Types G3000TF450
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM.
📁 Related Datasheet
G3000TF250 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1
Anode Shorted Gate Turn-Off Thyristor Types G3000TF250
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM.
G300N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300N04D3 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04D3
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04D3 uses advanced trench technology to
provide excellent RDS(ON) , low gate .
G300N04L - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300P06 - P-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G300P06T uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300P06T - P-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G300P06T uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G30 - Voltage-Controlled Attenuator Module
(MACOM)
G30/SMG30
Voltage-Controlled Attenuator Module 100 to 2000 MHz
Rev. V3
Features
FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .
G3018 - N-CHANNEL MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/11/30 REVISED DATE :
G3018
Description Features
N-CHANNEL MOSFET
BVDSS RDS(ON) ID
3.
