Datasheet4U Logo Datasheet4U.com

G300N04D3

N-Channel Enhancement Mode Power MOSFET

G300N04D3 Features

* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 6A < 30mΩ < 40mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram pin assignment Application l Power switch l DC/DC converters Ordering Information Device G300N04D3 Package DFN3X3-8L Marking G300N04

G300N04D3 Datasheet (711.95 KB)

Preview of G300N04D3 PDF

Datasheet Details

Part number:

G300N04D3

Manufacturer:

GOFORD

File Size:

711.95 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

G300N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300N04L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G300P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300P06T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G30 - Voltage-Controlled Attenuator Module (MACOM)
G30/SMG30 Voltage-Controlled Attenuator Module 100 to 2000 MHz Rev. V3 Features  FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .

G3018 - N-CHANNEL MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/11/30 REVISED DATE : G3018 Description Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 3.

TAGS

G300N04D3 N-Channel Enhancement Mode Power MOSFET GOFORD

Image Gallery

G300N04D3 Datasheet Preview Page 2 G300N04D3 Datasheet Preview Page 3

G300N04D3 Distributor