* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in
G30N60B3D Datasheet (264.05 KB)
G30N60B3D
Fairchild Semiconductor
264.05 KB
N-channel igbt.
HGTG30N60B3D
Data Sheet
www.DataSheet4U.com
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a.
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