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G30N60B3D N-Channel IGBT

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Description

HGTG30N60B3D Data Sheet www.DataSheet4U.com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a.

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Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in

Applications

* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. Packaging JEDEC STYLE TO-247 E C G Symbol C Ordering Information PART NUMBER HGTG30

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