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G30N60A4D Datasheet - Fairchild Semiconductor

G30N60A4D, SMPS Series N-Channel IGBT

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volta.
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G30N60A4D-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

G30N60A4D

Manufacturer:

Fairchild Semiconductor

File Size:

209.91 KB

Description:

SMPS Series N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in

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