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G30N60A4D SMPS Series N-Channel IGBT

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Description

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volta.

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Datasheet Specifications

Part number
G30N60A4D
Manufacturer
Fairchild Semiconductor
File Size
209.91 KB
Datasheet
G30N60A4D-FairchildSemiconductor.pdf
Description
SMPS Series N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in

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SMPS Series N-Channel IGBT Fairchild Semiconductor
Fairchild Semiconductor G30N60A4D-like datasheet