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G30N60C3D Datasheet - Intersil Corporation

G30N60C3D, N-Channel IGBT

www.DataSheet4U.com HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes.
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Datasheet Details

Part number:

G30N60C3D

Manufacturer:

Intersil Corporation

File Size:

153.77 KB

Description:

N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in a

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G30N60C3D N-Channel IGBT Intersil Corporation
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