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G30N60C3D - N-Channel IGBT

Intersil Corporation

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Datasheet Details

Part number	G30N60C3D
Manufacturer	Intersil Corporation
File Size	153.77 KB
Description	N-Channel IGBT
Datasheet	G30N60C3D_IntersilCorporation.pdf

G30N60C3D Product details

Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

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Published: Jan 28, 2008 |