G30N60C3D N-Channel IGBT

Intersil Corporation

Description

www.DataSheet4U.com HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes.

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Datasheet Specifications

Part number: G30N60C3D
Manufacturer: Intersil Corporation
File Size: 153.77 KB
Datasheet: G30N60C3D_IntersilCorporation.pdf
Description: N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in a

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N-Channel IGBT Intersil Corporation

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