Datasheet4U.com

G30T60 - IGW30N60T

Infineon

📥 Download Datasheet

G30T60 Datasheet Preview — Preview of G30T60 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	G30T60
Manufacturer	Infineon ↗
File Size	461.21 KB
Description	IGW30N60T
Datasheet	G30T60-Infineon.pdf

G30T60 Product details

Features

Very low VCE(sat) 1.5V (typ. ).
Maximum Junction Temperature 175°C.
Short circuit withstand time 5s.
Designed for : - Frequency Converters - Uninterruptible Power Supply.

📁 G30T60 Similar Datasheet

G30 - Voltage-Controlled Attenuator Module (MACOM)
G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G300N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04D3 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T - P-Channel Enhancement Mode Power MOSFET (GOFORD)

Other Datasheets by Infineon

G30T100 - IGW30N100T
G30H603 - IGBT
G30N60HS - High Speed IGBT

Published: Apr 3, 2015 |